YANOVITSKAYA, Z. Sh.: search on Z-Library

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1

The role of oxygen in high temperature superconductivity in YBa2Cu3O6+x compounds: a percolation model

L.V. Lutsevich, Z.Sh. Yanovitskaya

Journal:

Physics Letters A

Year:

1990

Language:

english

File:

PDF, 186 KB

english, 1990

2

Features of surface recovery behavior during interfaces formation in superlattices grown by MBE

L.Yu. Golobokova, V.A. Markov, O.P. Pchelyakov, Z.Sh. Yanovitskaya

Journal:

Superlattices and Microstructures

Year:

1991

Language:

english

File:

PDF, 232 KB

english, 1991

3

Interlayer atomic diffusion as the reason for self-assembled quantum dot formation

D.V. Brunev, I.G. Neizvestny, N.L. Shwartz, Z.Sh. Yanovitskaya

Journal:

Computer Physics Communications

Year:

2002

Language:

english

File:

PDF, 129 KB

english, 2002

4

3D-model of epitaxial growth on porous {111} and {100} Si surfaces

I.G. Neizvestny, N.L. Shwartz, Z.Sh. Yanovitskaya, A.V. Zverev

Journal:

Computer Physics Communications

Year:

2002

Language:

english

File:

PDF, 94 KB

english, 2002

5

Desynchronization mode of 2D-island creation on the vicinal surface during MBE growth

Z.Sh. Yanovitskaya, I.G. Neizvestny, N.L. Shwartz, M.I. Katkov, I.P. Ryzhenkov

Journal:

Applied Surface Science

Year:

1998

Language:

english

File:

PDF, 415 KB

english, 1998

6

Edge-dimer row – The reason of three-bilayer steps and islands stability on Si(1 1 1)-7 × 7

I.G. Neizvestny, K.N. Romanyuk, N.L. Shwartz, S.A. Teys, Z.Sh. Yanovitskaya, A.V. Zverev

Journal:

Surface Science

Year:

2006

Language:

english

File:

PDF, 416 KB

english, 2006

7

The simulation of epitaxy, sublimation, and annealing processes in a 3D silicon surface layer

A. V. Zverev, I. G. Neizvestnyi, N. L. Shvarts, Z. Sh. Yanovitskaya

Journal:

Year:

2001

Language:

english

File:

PDF, 242 KB

english, 2001

8

Causes of the stability of three-bilayer islands and steps on a Si (111) surface

A. V. Zverev, I. G. Neizvestny, I. A. Reizvikh, K. N. Romanyuk, S. A. Teys, N. L. Shwartz, Z. Sh. Yanovitskaya

Journal:

Year:

2005

Language:

english

File:

PDF, 378 KB

english, 2005

9

Transformations of porous layers upon high-temperature annealing: Simulation

T. B. Govorukha, A. V. Zverev, I. G. Neizvestny, N. L. Shwartz, Z. Sh. Yanovitskaya

Journal:

Russian Microelectronics

Year:

2007

Language:

english

File:

PDF, 815 KB

english, 2007

10

Electrical properties and photoluminescence of SiOxlayers with Si nanocrystals in relation to the SiOxcomposition

I. V. Antonova, M. B. Gulyaev, Z. Sh. Yanovitskaya, V. A. Volodin, D. V. Marin, M. D. Efremov, Y. Goldstein, J. Jedrzejewski

Journal:

Year:

2006

Language:

english

File:

PDF, 202 KB

english, 2006

11

SiOxlayer formation during plasma sputtering of Si and SiO2targets

A. N. Karpov, D. V. Marin, V. A. Volodin, J. Jedrzejewski, G. A. Kachurin, E. Savir, N. L. Shwartz, Z. Sh. Yanovitskaya, I. Balberg, Y. Goldstein

Journal:

Year:

2008

Language:

english

File:

PDF, 233 KB

english, 2008

12

Monte Carlo simulation of growth of nanowhiskers

A. G. Nastovjak, I. G. Neizvestny, I. L. Shwartz, Z. Sh. Yanovitskaya

Journal:

Year:

2010

Language:

english

File:

PDF, 365 KB

english, 2010

13

X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2and Si sources

S. N. Shamin, V. R. Galakhov, V. I. Aksenova, A. N. Karpov, N. L. Shvartz, Z. Sh. Yanovitskaya, V. A. Volodin, I. V. Antonova, T. B. Ezhevskaya, J. Jedrzejewski, E. Savir, I. Balberg

Journal:

Year:

2010

Language:

english

File:

PDF, 215 KB

english, 2010

14

A Monte Carlo simulation of the processes of nanostructure growth: The time-scale event-scheduling algorithm

A. V. Zverev, K. Yu. Zinchenko, N. L. Shwartz, Z. Sh. Yanovitskaya

Journal:

Nanotechnologies in Russia

Year:

2009

Language:

english

File:

PDF, 320 KB

english, 2009

15

Lattice Monte Carlo model of SiOxlayers

A. V. Zverev, I. G. Neizvestnyi, N. L. Shwartz, Z. Sh. Yanovitskaya

Journal:

Nanotechnologies in Russia

Year:

2008

Language:

english

File:

PDF, 392 KB

english, 2008

16

Simulation of nanochannel membrane formation

A. V. Zverev, S. I. Romanov, Ya. V. Titovskaya, N. L. Shwartz, Z. Sh. Yanovitskaya

Journal:

Optoelectronics, Instrumentation and Data Processing

Year:

2009

Language:

english

File:

PDF, 264 KB

english, 2009

17

Two-Dimensional Epitaxial Nucleation with Large Critical-Nucleus Size

I. G. Neizvestny, N. L. Shvarts, Z. Sh. Yanovitskaya

Journal:

Russian Microelectronics

Year:

2002

Language:

english

File:

PDF, 74 KB

english, 2002

18

Pore Sealing on Si(001) and Si(111) in Homoepitaxy and Annealing: A Monte Carlo Simulation

A. V. Zverev, I. G. Neizvestny, A. V. Chemakin, N. L. Shwartz, Z. Sh. Yanovitskaya

Journal:

Russian Microelectronics

Year:

2004

Language:

english

File:

PDF, 262 KB

english, 2004

19

[IEEE 2008 9th International Workshop and Tutorials on Electron Devices and Materials - Novosibirsk, Russia (2008.07.1-2008.07.5)] 2008 9th International Workshop and Tutorials on Electron Devices and Materials - Evaporation of thin oxide layer from Si-(111) surface (simulation)

Usenkov, Stanislav V., Yanovitskaya, Zoya Sh., Schwartz, Natalia L.

Year:

2008

Language:

english

File:

PDF, 421 KB

english, 2008

20

Numerical simulation of shock-wave processes in elastic media and structures. Part I: Solving method and algorithms

Ayzenberg-Stepanenko, M. V., Osharovich, G. G., Sher, E. N., Yanovitskaya, Z. Sh.

Journal:

Journal of Mining Science

Year:

2012

Language:

english

File:

PDF, 771 KB

english, 2012

21

KINETICS OF ATOMIC SURFACE TRANSFORMATION DURING STRANSKI–KRASTANOW GROWTH MODE

BRUNEV, D. V., KARPOV, A. N., NEIZVESTNY, I. G., SHWARTZ, N. L., YANOVITSKAYA, Z. Sh.

Journal:

International Journal of Nanoscience

Year:

2004

Language:

english

File:

PDF, 462 KB

english, 2004

22

Monte Carlo Simulation of Porous Layers Sintering

Neizvestny, I.G., Shwartz, Natasha L., Yanovitskaya, Z.Sh., Zverev, A.V.

Journal:

Key Engineering Materials

Year:

2007

Language:

english

File:

PDF, 294 KB

english, 2007

23

[IEEE 2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings - Altai, China (2002.7.1-2002.7.5)] Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Simulation of initial stages of Ge nano-island nucleation on Si (111) surface

Reizvikh, I.A., Zverev, A.V., Teys, S.A., Yanovitskaya, Z.Sh.

Year:

2002

Language:

english

File:

PDF, 303 KB

english, 2002